EPA120D updated 01/13/2006 high efficiency heterojunction power fet specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 1 of 2 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised january 2006 chip thickness: 75 20 microns all dimensions in micron s features ? +29.5dbm typical output power ? 19.5db typical power gain at 2ghz ? 0.5 x 1200 micron recessed ?mushroom? gate ? si 3 n 4 passivation and plated heat sink ? advanced epitaxial doping profile provides high power efficiency, linearity and reliability ? idss sorted in 30ma per bin range electrical characteristics (t a = 25 o c) caution! esd sensitive device. symbols parameters/test conditions min typ max unit p 1db output power at 1db compression f= 2ghz vds=8v, ids=50% idss f= 4ghz 28.0 29.5 29.5 dbm g 1db gain at 1db compression f= 2ghz vds=8v, ids=50% idss f= 4ghz 18.0 19.5 14.5 db pae power added efficiency at 1db compression vds=8v, ids=50% idss f=2ghz 50 % idss saturated drain current vds=3v, vgs=0v 210 360 510 ma gm transconductance vds=3v, vgs=0v 240 380 ms vp pinch-off voltage vds=3v,ids=3.6ma -1.0 -2.5 v bvgd drain breakdown voltage igd=1.2ma -13 -15 v bvgs source breakdown voltage igs=1.2ma -7 -14 v rth thermal resistance (au-sn eutectic attach) 40 45 o c/w maximum ratings at 25 o c symbols parameters absolute 1 continuous 2 vds drain-source voltage 12v 8v vgs gate-source voltage -5v -3v igsf forward gate current 5.4 ma 1.8 ma igsr reserve gate current 0.9 ma 0.3 ma pin input power 26 dbm @ 3db compression tch channel temperature 175 o c 175 o c tstg storage temperature -65/175 o c -65/175 o c pt total power dissipation 3.3 w 3.3 w note: 1. exceeding any of the above ratings may result in permanent damage. 2. exceeding any of the above ratings may reduce mttf below design goals.
EPA120D updated 01/13/2006 high efficiency heterojunction power fet specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 2 of 2 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised january 2006 s-parameters 8v, 1/2 idss freq --- s11 --- --- s21 --- --- s12 --- --- s22 --- (ghz) mag ang mag ang mag ang mag ang 1 0.891 -106.9 15.439 119.2 0.029 40.8 0.290 -64.3 2 0.858 -143.2 9.009 97.3 0.034 27.9 0.219 -86.7 3 0.854 -159.9 6.233 84.9 0.036 26.8 0.207 -97.0 4 0.850 -170.6 4.775 75.1 0.037 25.2 0.212 -103.1 5 0.856 -178.8 3.800 66.3 0.039 29.6 0.228 -112.6 6 0.856 174.1 3.195 58.6 0.041 31.4 0.245 -117.0 7 0.858 168.5 2.766 51.0 0.044 34.1 0.258 -121.6 8 0.863 162.7 2.424 43.9 0.046 35.9 0.279 -127.2 9 0.870 157.6 2.140 36.7 0.048 36.0 0.298 -133.0 10 0.872 153.1 1.926 30.2 0.054 37.5 0.324 -139.4 11 0.880 148.6 1.738 23.4 0.056 38.3 0.352 -146.3 12 0.889 145.4 1.565 17.0 0.059 40.9 0.383 -152.7 13 0.890 142.4 1.412 10.7 0.065 37.4 0.413 -160.3 14 0.898 140.3 1.289 5.2 0.070 36.2 0.459 -165.7 15 0.910 138.5 1.176 0.0 0.075 38.6 0.487 -170.9 16 0.905 136.4 1.080 -5.4 0.080 36.8 0.529 -175.5 17 0.909 135.0 0.991 -9.9 0.083 36.9 0.557 -179.2 18 0.903 133.4 0.922 -14. 9 0.092 35.4 0.581 177.8 19 0.901 130.8 0.874 -19. 6 0.100 33.4 0.607 173.1 20 0.909 127.3 0.821 -24. 3 0.109 32.7 0.614 168.7 note: the data included 0.7 mils diameter au bonding wires: 1 gate wires, 20 mils each; 1 drain wires, 12 mils each; 4 source wires, 7 mils each.
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